Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC520N15NS3 G BSC520N15NS3-G

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part. Summary of Features Excellent switching performance World’s lowest R DS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V – 80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems) Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications DIN rail power supplies On-board charging (OBC) for electric vehicles Telecommunication infrastructure Wired Communication Designers who used this product also designed with 2EDR8259H | Gate driver ICs 2EDB8259F | Gate driver ICs BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes 2EDR8259H | Gate driver ICs 2EDB8259F | Gate driver ICs BSC007N04LS6 | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IMT65R022M1H | Silicon Carbide MOSFET Discretes 2EDR8259H | Gate driver ICs 2EDB8259F | Gate driver ICs BSC007N04LS6 | N-Channel Power MOSFET 1 2