Infineon Technologies AG N-Channel Power MOSFET BSC340N08NS3-G

Description
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of Features Optimized technology for DC-DC converters Excellent gate charge x R DS(ON) product (FOM) Superior thermal resistance Dual sided cooling Low parasitic inductance Low profile (<0,7mm) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Potential Applications Solar Consumer Telecom Server PC power DC-DC AC-DC Adapter SMPS LED Motor control Applications LED strips and signage Servo motor drive and control Telecommunication infrastructure Designers who used this product also designed with IRS21271S | Gate driver ICs 1EDN7550B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB7259K | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs IPD320N20N3 G | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC360N15NS3 G | N-Channel Power MOSFET OPTIGA TPM SLB 9672 FW16 | OPTIGA™ TPM - Trusted Platform Module BSS806NE | Small signal/small power MOSFET IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1EDN7550B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB7259K | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 1 2 3 4 5
  • N-Channel Power MOSFET - BSC340N08NS3-G - Infineon Technologies AG
    Infineon Technologies AG
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Description
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of Features Optimized technology for DC-DC converters Excellent gate charge x R DS(ON) product (FOM) Superior thermal resistance Dual sided cooling Low parasitic inductance Low profile (<0,7mm) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Potential Applications Solar Consumer Telecom Server PC power DC-DC AC-DC Adapter SMPS LED Motor control Applications LED strips and signage Servo motor drive and control Telecommunication infrastructure Designers who used this product also designed with IRS21271S | Gate driver ICs 1EDN7550B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB7259K | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs IPD320N20N3 G | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC360N15NS3 G | N-Channel Power MOSFET OPTIGA TPM SLB 9672 FW16 | OPTIGA™ TPM - Trusted Platform Module BSS806NE | Small signal/small power MOSFET IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1EDN7550B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB7259K | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 1 2 3 4 5
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Datasheet
Datasheet Summary
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BSC340N08NS3-G is an N-channel power MOSFET designed for efficient switching in DC-DC converters and power supply applications. It is housed in a 3.3 mm × 3.3 mm Dual Cool™ 5x6 package with a height of less than 0.7 mm, featuring dual-sided cooling and low parasitic inductance. The device has a drain-source breakdown voltage of 80 V, a maximum continuous drain current of 34 A at 25 °C, and a typical on-state resistance of 3.4 mΩ at 10 V gate-source voltage. It is 100% avalanche tested and RoHS compliant with lead-free plating. The gate-source threshold voltage ranges from 1.7 V to 3 V, and the device supports a maximum junction temperature of 150 °C.

Datasheet Summary
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BSC340N08NS3-G is an N-channel power MOSFET designed for efficient switching in DC-DC converters and power supply applications. It is housed in a 3.3 mm × 3.3 mm Dual Cool™ 5x6 package with a height of less than 0.7 mm, featuring dual-sided cooling and low parasitic inductance. The device has a drain-source breakdown voltage of 80 V, a maximum continuous drain current of 34 A at 25 °C, and a typical on-state resistance of 3.4 mΩ at 10 V gate-source voltage. It is 100% avalanche tested and RoHS compliant with lead-free plating. The gate-source threshold voltage ranges from 1.7 V to 3 V, and the device supports a maximum junction temperature of 150 °C.

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Description
Supplier Links
N-Channel Power MOSFET - BSC340N08NS3-G - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC340N08NS3-G
N-Channel Power MOSFET BSC340N08NS3-G
OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). Summary of Features Optimized technology for DC-DC converters Excellent gate charge x R DS(ON) product (FOM) Superior thermal resistance Dual sided cooling Low parasitic inductance Low profile (<0,7mm) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Potential Applications Solar Consumer Telecom Server PC power DC-DC AC-DC Adapter SMPS LED Motor control Applications LED strips and signage Servo motor drive and control Telecommunication infrastructure Designers who used this product also designed with IRS21271S | Gate driver ICs 1EDN7550B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB7259K | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs IPD320N20N3 G | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSC360N15NS3 G | N-Channel Power MOSFET OPTIGA TPM SLB 9672 FW16 | OPTIGA™ TPM - Trusted Platform Module BSS806NE | Small signal/small power MOSFET IRS10752L | Gate driver ICs IRS4427S | Gate driver ICs 2EDL8033G4B | Gate driver ICs 2EDN7534B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS21271S | Gate driver ICs 1EDN7550B | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB7259K | Gate driver ICs BSC040N10NS5 | N-Channel Power MOSFET BSC070N10NS5 | N-Channel Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 1 2 3 4 5

OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).


Summary of Features

  • Optimized technology for DC-DC converters
  • Excellent gate charge x R DS(ON) product (FOM)
  • Superior thermal resistance
  • Dual sided cooling
  • Low parasitic inductance
  • Low profile (<0,7mm)
  • N-channel, normal level
  • 100% avalanche tested
  • Pb-free plating; RoHS compliant

Potential Applications

  • Solar
  • Consumer
  • Telecom
  • Server
  • PC power
  • DC-DC
  • AC-DC
  • Adapter
  • SMPS
  • LED
  • Motor control

Applications

  • LED strips and signage
  • Servo motor drive and control
  • Telecommunication infrastructure

Designers who used this product also designed with


  • IRS21271S |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDI60N12AF |
    Gate driver ICs
  • 2EDB7259K |
    Gate driver ICs
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • 2EDL8123G3C |
    Gate driver ICs
  • IPD320N20N3 G |
    N-Channel Power MOSFET
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • 2EDN7524R |
    Gate driver ICs
  • BSC360N15NS3 G |
    N-Channel Power MOSFET
  • OPTIGA TPM SLB 9672 FW16 |
    OPTIGA™ TPM - Trusted Platform Module
  • BSS806NE |
    Small signal/small power MOSFET
  • IRS10752L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • 2EDN7534B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • 1EDN7550B |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDI60N12AF |
    Gate driver ICs
  • 2EDB7259K |
    Gate driver ICs
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • BSC070N10NS5 |
    N-Channel Power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC340N08NS3-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0340 ohms
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