Infineon Technologies AG N-Channel Power MOSFET BSC160N15NS5

Description
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications 48 V intermediate bus converter (IBC) Adapters and chargers General purpose motor drive - variating frequency and voltage Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Designers who used this product also designed with 2EDB8259K | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS20752L | Gate driver ICs IRS4427S | Gate driver ICs XDPP1100-Q040 | Digital Power Controllers BSS138N | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant TDA21462 | Integrated Smart Power Stages S25HS02GTDPBHV150 | SEMPER™ NOR flash 2EDF7275F | Gate driver ICs IPP60R180CM8 | 600 V CoolMOS™ 8 2EDF7275K | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes BAS40-06 | Schottky Diodes 1EDN7511B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB8259K | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS20752L | Gate driver ICs IRS4427S | Gate driver ICs XDPP1100-Q040 | Digital Power Controllers BSS138N | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant TDA21462 | Integrated Smart Power Stages 1 2 3 4 5
Request a Quote Datasheet
Description
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications 48 V intermediate bus converter (IBC) Adapters and chargers General purpose motor drive - variating frequency and voltage Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Designers who used this product also designed with 2EDB8259K | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS20752L | Gate driver ICs IRS4427S | Gate driver ICs XDPP1100-Q040 | Digital Power Controllers BSS138N | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant TDA21462 | Integrated Smart Power Stages S25HS02GTDPBHV150 | SEMPER™ NOR flash 2EDF7275F | Gate driver ICs IPP60R180CM8 | 600 V CoolMOS™ 8 2EDF7275K | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes BAS40-06 | Schottky Diodes 1EDN7511B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB8259K | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS20752L | Gate driver ICs IRS4427S | Gate driver ICs XDPP1100-Q040 | Digital Power Controllers BSS138N | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant TDA21462 | Integrated Smart Power Stages 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC160N15NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC160N15NS5
N-Channel Power MOSFET BSC160N15NS5
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications 48 V intermediate bus converter (IBC) Adapters and chargers General purpose motor drive - variating frequency and voltage Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Designers who used this product also designed with 2EDB8259K | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS20752L | Gate driver ICs IRS4427S | Gate driver ICs XDPP1100-Q040 | Digital Power Controllers BSS138N | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant TDA21462 | Integrated Smart Power Stages S25HS02GTDPBHV150 | SEMPER™ NOR flash 2EDF7275F | Gate driver ICs IPP60R180CM8 | 600 V CoolMOS™ 8 2EDF7275K | Gate driver ICs IDH06G65C6 | CoolSiC™ Schottky Diodes BAS40-06 | Schottky Diodes 1EDN7511B | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 1ED44173N01B | Gate driver ICs 1EDI60N12AF | Gate driver ICs 2EDB8259K | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS20752L | Gate driver ICs IRS4427S | Gate driver ICs XDPP1100-Q040 | Digital Power Controllers BSS138N | Small signal/small power MOSFET ICE2QR2280G | CoolSET™ Quasi Resonant TDA21462 | Integrated Smart Power Stages 1 2 3 4 5

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.


Summary of Features

  • Lower R DS(on) without compromising FOM gd and FOM oss
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Benefits

  • Reduced paralleling
  • Size reduction enabled with SuperSO8 best-in-class
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

Potential Applications

  • Low voltage drives
  • Telecom
  • Solar

Applications

  • 48 V intermediate bus converter (IBC)
  • Adapters and chargers
  • General purpose motor drive - variating frequency and voltage
  • Solutions for inductive wireless charging above 50 W
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 2EDB8259K |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS20752L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • XDPP1100-Q040 |
    Digital Power Controllers
  • BSS138N |
    Small signal/small power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • TDA21462 |
    Integrated Smart Power Stages
  • S25HS02GTDPBHV150 |
    SEMPER™ NOR flash
  • 2EDF7275F |
    Gate driver ICs
  • IPP60R180CM8 |
    600 V CoolMOS™ 8
  • 2EDF7275K |
    Gate driver ICs
  • IDH06G65C6 |
    CoolSiC™ Schottky Diodes
  • BAS40-06 |
    Schottky Diodes
  • 1EDN7511B |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 1EDI60N12AF |
    Gate driver ICs
  • 2EDB8259K |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS20752L |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • XDPP1100-Q040 |
    Digital Power Controllers
  • BSS138N |
    Small signal/small power MOSFET
  • ICE2QR2280G |
    CoolSET™ Quasi Resonant
  • TDA21462 |
    Integrated Smart Power Stages

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC160N15NS5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0160 ohms
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