Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC112N06LD BSC112N06LD

Description
OptiMOS™ 60V power MOSFET Benefits Dual Super SO8 package for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives Applications Consumer electronics Domestic robots State-of-the-art semiconductors enabling the new digitalized, ultra-connected healthcare ecosystem
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Description
OptiMOS™ 60V power MOSFET Benefits Dual Super SO8 package for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives Applications Consumer electronics Domestic robots State-of-the-art semiconductors enabling the new digitalized, ultra-connected healthcare ecosystem
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC112N06LD - BSC112N06LD - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC112N06LD
BSC112N06LD
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC112N06LD BSC112N06LD
OptiMOS™ 60V power MOSFET Benefits Dual Super SO8 package for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives Applications Consumer electronics Domestic robots State-of-the-art semiconductors enabling the new digitalized, ultra-connected healthcare ecosystem

OptiMOS™ 60V power MOSFET

Benefits

  • Dual Super SO8 package for high power density (smallest footprint)
  • Superior thermal resistance
  • High operating temperature up to 175°C
  • High shot-through immunity due to Qgd/Qgs<0.8
  • Pb-free plating, RoHS compliant

Potential Applications

  • SMPS
  • Inductive wireless charging
  • Load switches
  • Battery management systems
  • LV drives

Applications

  • Consumer electronics
  • Domestic robots
  • State-of-the-art semiconductors enabling the new digitalized, ultra-connected healthcare ecosystem
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC112N06LD
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC112N06LD
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.0112 ohms
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