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Infineon Technologies AG N-Channel Power MOSFET BSC110N15NS5

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Description
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N-Channel Power MOSFET - BSC110N15NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC110N15NS5
N-Channel Power MOSFET BSC110N15NS5
The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications Power transmission and distribution Telecommunication infrastructure Trusted semiconductor solutions for light electric vehicles (LEV) Designers who used this product also designed with 1EDB8275F | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS20752L | Gate Driver ICs BSZ900N15NS3 G | N-Channel Power MOSFET BSC320N20NS3 G | N-Channel Power MOSFET BSC061N08NS5 | N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET BSC040N08NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET PXM1310CDM-G003 | Digital Multiphase Controllers TDA21462 | Integrated Smart Power Stages BAS70-05W | Schottky Diodes IRS25752L | Gate Driver ICs BSZ340N08NS3 G | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET XMC4200-Q48K256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 ICE2QR2280G-1 | Quasi Resonant CoolSET™ BSC047N08NS3 G | N-Channel Power MOSFET 1EDB8275F | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS20752L | Gate Driver ICs BSZ900N15NS3 G | N-Channel Power MOSFET BSC320N20NS3 G | N-Channel Power MOSFET BSC061N08NS5 | N-Channel Power MOSFET BSC030N08NS5 | N-Channel Power MOSFET 1 2 3 4 5

The new OptiMOS™ 5 150 V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The new products offer a breakthrough reduction in R DS(on) (up to 25 percent compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.


Summary of Features

  • Lower R DS(on) without compromising FOM gd and FOM oss
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Benefits

  • Reduced paralleling
  • Size reduction enabled with SuperSO8 best-in-class
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

Potential Applications

  • Low voltage drives
  • Telecom
  • Solar

Applications

  • Power transmission and distribution
  • Telecommunication infrastructure
  • Trusted semiconductor solutions for light electric vehicles (LEV)

Designers who used this product also designed with


  • 1EDB8275F |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS20752L |
    Gate Driver ICs
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • BSC320N20NS3 G |
    N-Channel Power MOSFET
  • BSC061N08NS5 |
    N-Channel Power MOSFET
  • BSC030N08NS5 |
    N-Channel Power MOSFET
  • BSC040N08NS5 |
    N-Channel Power MOSFET
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • PXM1310CDM-G003 |
    Digital Multiphase Controllers
  • TDA21462 |
    Integrated Smart Power Stages
  • BAS70-05W |
    Schottky Diodes
  • IRS25752L |
    Gate Driver ICs
  • BSZ340N08NS3 G |
    N-Channel Power MOSFET
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • XMC4200-Q48K256 BA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • ICE2QR2280G-1 |
    Quasi Resonant CoolSET™
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • 1EDB8275F |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS20752L |
    Gate Driver ICs
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • BSC320N20NS3 G |
    N-Channel Power MOSFET
  • BSC061N08NS5 |
    N-Channel Power MOSFET
  • BSC030N08NS5 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet
PowerTDFN-8 MOSFETs ROHS - 376-BSC110N15NS5 - Utmel Electronic Limited
Hong Kong, China
PowerTDFN-8 MOSFETs ROHS
376-BSC110N15NS5
PowerTDFN-8 MOSFETs ROHS 376-BSC110N15NS5
PowerTDFN-8 MOSFETs ROHS

PowerTDFN-8 MOSFETs ROHS

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC110N15NS5 - 1154702-BSC110N15NS5 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC110N15NS5
1154702-BSC110N15NS5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC110N15NS5 1154702-BSC110N15NS5
Manufacturer: Infineon Technologies Win Source Part Number: 1154702-BSC110N15NS5 Family Name: BSC110N15NS5 Manufacturer Homepage: www.infineon.com Introduction Date: June 09, 2015 ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1154702-BSC110N15NS5
Family Name: BSC110N15NS5
Manufacturer Homepage: www.infineon.com
Introduction Date: June 09, 2015
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Supplier's Site

Technical Specifications

  Infineon Technologies AG Utmel Electronic Limited Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSC110N15NS5 376-BSC110N15NS5 1154702-BSC110N15NS5
Product Name N-Channel Power MOSFET PowerTDFN-8 MOSFETs ROHS TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC110N15NS5
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0110 ohms
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