MOSFET N-CH 60V 12A/50A TDSON
N-Channel 60V 12A (Ta), 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
N-Channel 60V 12A (Ta), 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
N-Channel 60V 12A (Ta), 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
MOSFET N-CH 60V 12A/50A TDSON Product overview: BSC100N06LS3GATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC100N06LS3GATM
Manufacturer: Infineon Technologies
Win Source Part Number: 113915-BSC100N06LS3G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 12A (Ta), 50A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 23μA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 3500pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited
MOSFET, N CHANNEL, 60V, 50A, 8TDSON; TRANSISTOR POLARITY:N CHANNEL; DRAIN SOURCE VOLTAGE VDS:60V; CONTINUOUS DRAIN CURRENT ID:50A; ON RESISTANCE RDS(ON):0.0078OHM; TRANSISTOR MOUNTING:SURFACE MOUNT; RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N CHANNEL, 60V, 50A, 8TDSON; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:50A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
MOSFET N-CH 60V 12A/50A TDSON
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC100N06LS3GATMA1 | BSC100N06LS3GATMA1CT-ND | 278-BSC100N06LS3GATMA1 | 113915-BSC100N06LS3GATMA1 | 108044322 | 47W3311 | BSC100N06LS3GATMA1 | BSC100N06LS3GATMA1 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 60V 12A 50A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC100N06LS3GATMA1 | Transistor | Mosfet, N Channel, 60V, 50A, 8Tdson; Channel Type Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| IDSS | 12000 milliamps | 50000 milliamps | ||||||
| PD | 2500 milliwatts | 50 milliwatts | 2500 to 50000 milliwatts |
