Manufacturer: Infineon Technologies
Win Source Part Number: 744908-BSC100N06LS3G
Family Name: BSC100N06LS3
Manufacturer Homepage: www.infineon.com
Reference case: TDSON-8
Reference Date Code: 14+
Alternative Parts (Cross-Reference): RS1L120GNTB; TSM130NB06LCR RLG; TSM130NB06CR RLG; FDMS5672;
Introduction Date: January 01, 2000
ECCN: EAR99
Country of Origin: Austria, China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
OptiMOS3 Power-Transistor / Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Product overview: BSC100N06LS3G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 12A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC100N06LS3G can be used for catalog matching and distributor lookup.
POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.01OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TDSON-8. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Radwell International | |
|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 744908-BSC100N06LS3G | 285-BSC100N06LS3G | 61999935 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC100N06LS3G | 60V 12A MOSFET Transistor | Transistor |
| Package Type | SOT3 |