Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC0993ND BSC0993ND

Description
With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Reduction of overall system costs Operation at high-switching frequency Potential Applications Wirless charging Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC0993ND - BSC0993ND - Infineon Technologies AG
    Infineon Technologies AG
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Description
With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Reduction of overall system costs Operation at high-switching frequency Potential Applications Wirless charging Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse
Request a Quote
Datasheet
Datasheet Summary
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The BSC0993ND is a dual N-channel OptiMOS™ power MOSFET rated for 30 V drain-source voltage, designed for wireless charger applications with optimized switching performance. It is packaged in a PG-TISON-8 case measuring 5 mm × 6 mm and features a maximum on-state resistance of 5.62 mΩ at 10 A and 10 V gate drive. The device is rated for a continuous drain current of 17 A and an avalanche energy of 14 mJ. It meets RoHS and IEC 61249-2-21 halogen-free standards and is qualified according to JEDEC J-STD-20 and JESD22.

Datasheet Summary
Powered by GS/AI

The BSC0993ND is a dual N-channel OptiMOS™ power MOSFET rated for 30 V drain-source voltage, designed for wireless charger applications with optimized switching performance. It is packaged in a PG-TISON-8 case measuring 5 mm × 6 mm and features a maximum on-state resistance of 5.62 mΩ at 10 A and 10 V gate drive. The device is rated for a continuous drain current of 17 A and an avalanche energy of 14 mJ. It meets RoHS and IEC 61249-2-21 halogen-free standards and is qualified according to JEDEC J-STD-20 and JESD22.

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC0993ND - BSC0993ND - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC0993ND
BSC0993ND
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC0993ND BSC0993ND
With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. Summary of Features Best-in-class on-state resistance Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd) RoHS compliant and halogen free Optimized EMI behavior (integrated damping network) Benefits Highest efficiency Reduction of overall system costs Operation at high-switching frequency Potential Applications Wirless charging Desktop and server Single-phase and multiphase POL CPU/GPU VR in notebooks High power density voltage regulator Or-ing E-fuse

With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.


Summary of Features

  • Best-in-class on-state resistance
  • Benchmark switching performance (lowest figure of merits R on x Q g and
    R on x Q gd)
  • RoHS compliant and halogen free
  • Optimized EMI behavior (integrated
    damping network)

Benefits

  • Highest efficiency
  • Reduction of overall system costs
  • Operation at high-switching frequency

Potential Applications

  • Wirless charging
  • Desktop and server
  • Single-phase and multiphase POL
  • CPU/GPU VR in notebooks
  • High power density voltage regulator
  • Or-ing
  • E-fuse
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC0993ND
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC0993ND
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.0050 ohms
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