BSC094N06LS5 is an N-channel MOSFET optimized for high-performance switching applications such as synchronous rectification. It is packaged in a PG-TDSON-8 case with dimensions of 5.0 mm × 6.0 mm. The device has a drain-source breakdown voltage of 60 V, a maximum on-state resistance of 9.4 mΩ at 10 V gate drive and 24 A drain current, and a continuous drain current rating of 47 A at 25 °C junction temperature. It supports 100% avalanche testing with 13 mJ single-pulse energy and is rated for operation from -55 °C to 150 °C. The MOSFET meets RoHS and IEC 61249-2-21 standard requirements for lead-free coating and halogen-free content.
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package
Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BSC094N06LS5 |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0094 ohms |
