Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)
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MOSFETs N-Ch 30V,30V 40A,40A TISON-8 Product overview: BSC0923NDI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0923NDI can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 201391-BSC0923NDI
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TISON-8
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A, 32A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 1160pF @ 15V
Maximum Rds On at Id,Vgs: 5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 30V,30V 40A,40A TISON-8
TISON-8-EP(6x5) MOSFETs ROHS
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC0923NDI | 2088-BSC0923NDI | 201391-BSC0923NDI | BSC0923NDI | BSC0923NDI | BSC0923NDI |
| Product Name | N-Channel Power MOSFET | 30V 40A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0923NDI | Transistors | MOSFET | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N+N | N-Channel | N-Channel | |||
| Transistor Technology / Material | Si/SiC | |||||
| rDS(on) | 0.0028 to 0.0050 ohms | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | PG-TISON-8 | Reel | SOT3; PG-TISON-8 |
