With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
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Manufacturer: Infineon Technologies
Win Source Part Number: 1154695-BSC0911ND
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON EP T/R Product overview: BSC0911ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 18A, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 18A, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC0911ND can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC0911ND | 1154695-BSC0911ND | 278-BSC0911ND | BSC0911ND |
| Product Name | N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0911ND | 25V 18A 30A MOSFET Transistor | MOSFET |
| Polarity | N-Channel; N | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||
| rDS(on) | 0.0012 to 0.0032 ohms | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||
| Package Type | PG-TISON-8 | SOT3 | Tape and Reel |