Infineon Technologies AG N-Channel Power MOSFET BSC0910NDI

Description
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6). Benefits Save overall system costs by reducing the number of phases in multiphase converters Reduce power losses and increase efficiency for all load conditions Save space with smallest packages like CanPAK™, S3O8 or system in package solution Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in Potential Applications Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control Applications Edge computing
  • N-Channel Power MOSFET - BSC0910NDI - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0910NDI - 1154694-BSC0910NDI - Win Source Electronics
    Win Source Electronics
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Description
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6). Benefits Save overall system costs by reducing the number of phases in multiphase converters Reduce power losses and increase efficiency for all load conditions Save space with smallest packages like CanPAK™, S3O8 or system in package solution Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in Potential Applications Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control Applications Edge computing
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Datasheet
Datasheet Summary
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BSC0910NDI is a dual N-channel OptiMOS™ MOSFET designed for high-performance buck converters. It is packaged in a PG-TISON-8 case, with dimensions consistent with standard 8-pin thermal-optimized packages. Each channel has a drain-source breakdown voltage of 25 V, a maximum continuous drain current of 40 A at T₌=70 °C with V₋₏=10 V, and an on-state resistance of 4.6 mΩ and 1.2 mΩ at V₋₏=10 V for the respective channels. The device operates with logic-level gate drive (4.5 V rated), is 100% avalanche tested with single-pulse avalanche energy ratings of 12 mJ and 80 mJ for the two channels, and complies with JEDEC standards for target applications. It is RoHS compliant and halogen-free per IEC61249-2-21.

Datasheet Summary
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BSC0910NDI is a dual N-channel OptiMOS™ MOSFET designed for high-performance buck converters. It is packaged in a PG-TISON-8 case, with dimensions consistent with standard 8-pin thermal-optimized packages. Each channel has a drain-source breakdown voltage of 25 V, a maximum continuous drain current of 40 A at T₌=70 °C with V₋₏=10 V, and an on-state resistance of 4.6 mΩ and 1.2 mΩ at V₋₏=10 V for the respective channels. The device operates with logic-level gate drive (4.5 V rated), is 100% avalanche tested with single-pulse avalanche energy ratings of 12 mJ and 80 mJ for the two channels, and complies with JEDEC standards for target applications. It is RoHS compliant and halogen-free per IEC61249-2-21.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC0910NDI - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC0910NDI
N-Channel Power MOSFET BSC0910NDI
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6). Benefits Save overall system costs by reducing the number of phases in multiphase converters Reduce power losses and increase efficiency for all load conditions Save space with smallest packages like CanPAK™, S3O8 or system in package solution Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in Potential Applications Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control Applications Edge computing

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).


Benefits

  • Save overall system costs by reducing the number of phases in multiphase converters
  • Reduce power losses and increase efficiency for all load conditions
  • Save space with smallest packages like CanPAK™, S3O8 or system in package solution
  • Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

Potential Applications

  • Onboard charger
  • Mainboard
  • Notebook
  • DC-DC
  • VRD/VRM
  • LED
  • Motor control

Applications

  • Edge computing
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0910NDI - 1154694-BSC0910NDI - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0910NDI
1154694-BSC0910NDI
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0910NDI 1154694-BSC0910NDI
Manufacturer: Infineon Technologies Win Source Part Number: 1154694-BSC0910NDI Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154694-BSC0910NDI
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
40V MOSFET Transistor
2088-BSC0910NDI
40V MOSFET Transistor 2088-BSC0910NDI
MOSFETs TRENCH <= 40V Product overview: BSC0910NDI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0910NDI can be used for catalog matching and distributor lookup.

MOSFETs TRENCH <= 40V Product overview: BSC0910NDI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0910NDI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
BSC0910NDI
MOSFET BSC0910NDI
MOSFET TRANSITIONAL MOSFETS

MOSFET TRANSITIONAL MOSFETS

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC0910NDI 1154694-BSC0910NDI 2088-BSC0910NDI BSC0910NDI
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0910NDI 40V MOSFET Transistor MOSFET
Polarity N-Channel; N+N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0012 to 0.0046 ohms
TJ -55 to 150 C (-67 to 302 F)
Package Type PG-TISON-8 SOT3 Reel
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