Infineon Technologies AG N-Channel Power MOSFET BSC0901NS

Description
OptiMOS™ 30V power MOSFETs for efficient power management Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6). Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Edge computing Energy Storage Systems Mobile devices and smartphones Designers who used this product also designed with TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators
Request a Quote Datasheet
Description
OptiMOS™ 30V power MOSFETs for efficient power management Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6). Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Edge computing Energy Storage Systems Mobile devices and smartphones Designers who used this product also designed with TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC0901NS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC0901NS
N-Channel Power MOSFET BSC0901NS
OptiMOS™ 30V power MOSFETs for efficient power management Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6). Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications 48 V intermediate bus converter (IBC) Cordless power tools and outdoor power equipment Edge computing Energy Storage Systems Mobile devices and smartphones Designers who used this product also designed with TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators TDA21535 | Integrated Smart Power Stages BSZ086P03NS3 G | P-Channel Power MOSFET 2N7002 | N-Channel Power MOSFET IR3888AMTRPBF | Integrated POL Voltage Regulators

OptiMOS™ 30V power MOSFETs for efficient power management

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6).


Summary of Features

  • Ultra low gate and output charge
  • Lowest on-state resistance in small footprint packages
  • Easy to design in

Benefits

  • Increased battery lifetime
  • Improved EMI behavior making external snubber networks obsolete
  • Saving costs
  • Saving space
  • Reducing power losses

Potential Applications

  • Onboard charger
  • Notebook
  • Mainboard
  • DC-DC
  • VRD/VRM
  • Motor control
  • LED

Applications

  • 48 V intermediate bus converter (IBC)
  • Cordless power tools and outdoor power equipment
  • Edge computing
  • Energy Storage Systems
  • Mobile devices and smartphones

Designers who used this product also designed with


  • TDA21535 |
    Integrated Smart Power Stages
  • BSZ086P03NS3 G |
    P-Channel Power MOSFET
  • 2N7002 |
    N-Channel Power MOSFET
  • IR3888AMTRPBF |
    Integrated POL Voltage Regulators
  • TDA21535 |
    Integrated Smart Power Stages
  • BSZ086P03NS3 G |
    P-Channel Power MOSFET
  • 2N7002 |
    N-Channel Power MOSFET
  • IR3888AMTRPBF |
    Integrated POL Voltage Regulators
  • TDA21535 |
    Integrated Smart Power Stages
  • BSZ086P03NS3 G |
    P-Channel Power MOSFET
  • 2N7002 |
    N-Channel Power MOSFET
  • IR3888AMTRPBF |
    Integrated POL Voltage Regulators
Supplier's Site Datasheet
Transistors - BSC0901NS - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC0901NS
Transistors BSC0901NS
30V 28A 1.9mΩ@10V,30A 2.5W 2.2V@250uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

30V 28A 1.9mΩ@10V,30A 2.5W 2.2V@250uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NS - 012123-BSC0901NS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NS
012123-BSC0901NS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NS 012123-BSC0901NS
Manufacturer: Infineon Technologies Win Source Part Number: 012123-BSC0901NS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Family Name: BSC0901NS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2800pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.9 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): TSM020N03PQ56 RLG; RS1E320GNTB; FDMS0302S; TPCA8026(TE12L,Q,M ; Introduction Date: December 06, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 012123-BSC0901NS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Family Name: BSC0901NS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 2800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.9 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): TSM020N03PQ56 RLG; RS1E320GNTB; FDMS0302S; TPCA8026(TE12L,Q,M ;
Introduction Date: December 06, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 100A MOSFET Transistor
2088-BSC0901NS
30V 100A MOSFET Transistor 2088-BSC0901NS
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS Product overview: BSC0901NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0901NS can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS Product overview: BSC0901NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0901NS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC0901NS BSC0901NS 012123-BSC0901NS 2088-BSC0901NS BSC0901NS
Product Name N-Channel Power MOSFET Transistors TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NS 30V 100A MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0019 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type PG-TDSON-8 SOT3; PG-TDSON-8 Reel
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