OptiMOS™ 30V power MOSFETs for efficient power management
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 30V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in half-bridge configuration (power stage 5x6).
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MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS Product overview: BSC0901NS from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSC0901NS can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 012123-BSC0901NS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Family Name: BSC0901NS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 2800pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.9 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): TSM020N03PQ56 RLG; RS1E320GNTB; FDMS0302S; TPCA8026(TE12L,Q,M ;
Introduction Date: December 06, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS
| Infineon Technologies AG | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC0901NS | BSC0901NS | 2088-BSC0901NS | 012123-BSC0901NS | BSC0901NS |
| Product Name | N-Channel Power MOSFET | Transistors | 30V 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0901NS | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | ||||
| rDS(on) | 0.0019 ohms | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | PG-TDSON-8 | Reel | SOT3; PG-TDSON-8 |