The BSC088N15LS5 is an N-channel logic-level MOSFET rated for 150 V drain-source voltage, designed for power conversion applications. It is housed in a PG-TDSON-8 package with dimensions of 5.35 mm max length, 6.10 mm max width, and 1.20 mm max height. The device has a maximum on-state resistance of 8.8 mΩ at Vₓ₃ = 10 V and 12 mΩ at Vₓ₃ = 4.5 V, with a continuous drain current of 87 A at Tₐ = 25 °C. The gate charge total is 40 nC at Vₓ₃ = 0 V to 10 V, and avalanche energy is rated at 85 mJ. The part is fully qualified according to JEDEC for industrial applications, RoHS compliant, and halogen-free per IEC 61249-2-21.
OptiMOS™ 5 power MOSFET 150 V logic level in SuperSO8
The OptiMOS™ 5 power MOSFET logic level 150 V family offers the same excellent performance of the OptiMOS™ 5 150 V products with the capability of operating with just 4.5 V of Vgs.
The BSC088N15LS5 features very low RDS(on) of 8.8/12 mOhm (VGS = 10 V/4.5 V) and very low Qg of 21 nC (VGS = 4.5 V) in an industry standard SuperSO8 package enabling optimal thermal management in small and lightweight USB-PD EPR charger and adapter applications.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | BSC088N15LS5 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC088N15LS5 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0088 ohms |
