Infineon Technologies AG 100V 13.8A MOSFET Transistor BSC082N10LSGATMA1

Description
MOSFET N-CH 100V 13.8A 8TDSON Product overview: BSC082N10LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC082N10LSGATMA 1 can be used for catalog matching and distributor lookup.
  • Single FETs, MOSFETs - BSC082N10LSGATMA1CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - BSC082N10LSGATMA1TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - BSC082N10LSGATMA1DKR-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC082N10LSGATMA1 - 103357-BSC082N10LSGATMA1 - Win Source Electronics
    Win Source Electronics
  • Mosfet Transistor, N Channel, 100 A, 100 V, 0.0068 Ohm, 10 V, 1.85 V Rohs Compliant Infineon - 50Y1806 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC082N10LSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Single FETs, MOSFETs - BSC082N10LSGATMA1 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
MOSFET N-CH 100V 13.8A 8TDSON Product overview: BSC082N10LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC082N10LSGATMA 1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
100V 13.8A MOSFET Transistor
278-BSC082N10LSGATMA1
100V 13.8A MOSFET Transistor 278-BSC082N10LSGATMA1
MOSFET N-CH 100V 13.8A 8TDSON Product overview: BSC082N10LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC082N10LSGATMA 1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 13.8A 8TDSON Product overview: BSC082N10LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC082N10LSGATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - BSC082N10LSGATMA1CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC082N10LSGATMA1CT-ND
Single FETs, MOSFETs BSC082N10LSGATMA1CT-ND
N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

Buy Now Datasheet
Single FETs, MOSFETs - BSC082N10LSGATMA1TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC082N10LSGATMA1TR-ND
Single FETs, MOSFETs BSC082N10LSGATMA1TR-ND
N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

Buy Now Datasheet
Single FETs, MOSFETs - BSC082N10LSGATMA1DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC082N10LSGATMA1DKR-ND
Single FETs, MOSFETs BSC082N10LSGATMA1DKR-ND
N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC082N10LSGATMA1 - 103357-BSC082N10LSGATMA1 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC082N10LSGATMA1
103357-BSC082N10LSGATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC082N10LSGATMA1 103357-BSC082N10LSGATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 103357-BSC082N10LSGA TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 156W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 13.8A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2.4V @ 110μA Max Gate Charge: 104nC @ 10V Max Input Capacitance: 7400pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 100A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 103357-BSC082N10LSGATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.8A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 110μA
Max Gate Charge: 104nC @ 10V
Max Input Capacitance: 7400pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Mosfet Transistor, N Channel, 100 A, 100 V, 0.0068 Ohm, 10 V, 1.85 V Rohs Compliant Infineon - 50Y1806 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 100 A, 100 V, 0.0068 Ohm, 10 V, 1.85 V Rohs Compliant Infineon
50Y1806
Mosfet Transistor, N Channel, 100 A, 100 V, 0.0068 Ohm, 10 V, 1.85 V Rohs Compliant Infineon 50Y1806
MOSFET Transistor, N Channel, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC082N10LSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC082N10LSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC082N10LSGATMA1
MOSFET N-CH 100V 13.8A 8TDSON

MOSFET N-CH 100V 13.8A 8TDSON

Supplier's Site
Single FETs, MOSFETs - BSC082N10LSGATMA1 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
BSC082N10LSGATMA1
Single FETs, MOSFETs BSC082N10LSGATMA1
MOSFET N-CH 100V 13.8A 8TDSON

MOSFET N-CH 100V 13.8A 8TDSON

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-BSC082N10LSGATMA1 BSC082N10LSGATMA1CT-ND 103357-BSC082N10LSGATMA1 50Y1806 BSC082N10LSGATMA1 BSC082N10LSGATMA1
Product Name 100V 13.8A MOSFET Transistor Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC082N10LSGATMA1 Mosfet Transistor, N Channel, 100 A, 100 V, 0.0068 Ohm, 10 V, 1.85 V Rohs Compliant Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts 100 volts 100 volts
PD 156000 milliwatts 156000 milliwatts 156000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type Tape & Reel (TR) 8-PowerTDFN SOT3; PG-TDSON-8 TO-3 8-PowerTDFN 8-PowerTDFN
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