N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1
N-Channel 100V 13.8A (Ta), 100A (Tc) 156W (Tc) Surface Mount PG-TDSON-8-1
MOSFET N-CH 100V 13.8A 8TDSON Product overview: BSC082N10LSGATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC082N10LSGATMA
Manufacturer: Infineon Technologies
Win Source Part Number: 103357-BSC082N10LSGA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 156W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 13.8A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 110μA
Max Gate Charge: 104nC @ 10V
Max Input Capacitance: 7400pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 100A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 13.8A 8TDSON
MOSFET N-CH 100V 13.8A 8TDSON
MOSFET Transistor, N Channel, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V RoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSC082N10LSGATMA1CT-ND | 278-BSC082N10LSGATMA1 | 103357-BSC082N10LSGATMA1 | BSC082N10LSGATMA1 | BSC082N10LSGATMA1 | 50Y1806 |
| Product Name | Single FETs, MOSFETs | 100V 13.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC082N10LSGATMA1 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 100 A, 100 V, 0.0068 Ohm, 10 V, 1.85 V Rohs Compliant Infineon |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | 8-PowerTDFN | Tape & Reel (TR) | SOT3; PG-TDSON-8 | 8-PowerTDFN | 8-PowerTDFN | TO-3 |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||
| PD | 156000 milliwatts | 156000 milliwatts | 156000 milliwatts |
