Infineon Technologies AG N-Channel Power MOSFET BSC077N12NS3-G

Description
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120 V OptiMOS™ technology gives new possibilites for optimized solutions. Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 12–48 V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems) Or-ing switches and circuit breakers in 48V systems Class D audio amplifiers Applications 48 V intermediate bus converter (IBC) Adapters and chargers DIN rail power supplies Energy Storage Systems Microinverter solutions Designers who used this product also designed with 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IRS21271S | Gate driver ICs 2EDS7165H | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IRS21271S | Gate driver ICs 2EDS7165H | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET 1 2
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Description
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120 V OptiMOS™ technology gives new possibilites for optimized solutions. Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 12–48 V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems) Or-ing switches and circuit breakers in 48V systems Class D audio amplifiers Applications 48 V intermediate bus converter (IBC) Adapters and chargers DIN rail power supplies Energy Storage Systems Microinverter solutions Designers who used this product also designed with 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IRS21271S | Gate driver ICs 2EDS7165H | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IRS21271S | Gate driver ICs 2EDS7165H | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET 1 2
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Datasheet
Datasheet Summary
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The BSC077N12NS3-G is an N-channel MOSFET for high-frequency switching and synchronous rectification, packaged in a PG-TDSON-8 case with dimensions defined by the manufacturer. It has a drain-source breakdown voltage of 120 V, a maximum on-state resistance of 7.7 mΩ at 10 V gate-source voltage and 50 A drain current, and a continuous drain current rating of 98 A at 150 °C junction temperature. The device is RoHS compliant, halogen-free per IEC61249-2-21, and qualified according to JEDEC standards for target applications.

Datasheet Summary
Powered by GS/AI

The BSC077N12NS3-G is an N-channel MOSFET for high-frequency switching and synchronous rectification, packaged in a PG-TDSON-8 case with dimensions defined by the manufacturer. It has a drain-source breakdown voltage of 120 V, a maximum on-state resistance of 7.7 mΩ at 10 V gate-source voltage and 50 A drain current, and a continuous drain current rating of 98 A at 150 °C junction temperature. The device is RoHS compliant, halogen-free per IEC61249-2-21, and qualified according to JEDEC standards for target applications.

Suppliers

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Product
Description
Supplier Links
N-Channel Power MOSFET - BSC077N12NS3-G - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC077N12NS3-G
N-Channel Power MOSFET BSC077N12NS3-G
The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications. The 120 V OptiMOS™ technology gives new possibilites for optimized solutions. Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 12–48 V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems) Or-ing switches and circuit breakers in 48V systems Class D audio amplifiers Applications 48 V intermediate bus converter (IBC) Adapters and chargers DIN rail power supplies Energy Storage Systems Microinverter solutions Designers who used this product also designed with 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IRS21271S | Gate driver ICs 2EDS7165H | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET SN7002W | Small signal/small power MOSFET IRS21271S | Gate driver ICs 2EDS7165H | Gate driver ICs IPT60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN7511B | Gate driver ICs BSC010N04LS6 | N-Channel Power MOSFET 1 2

The 120 V OptiMOS™ family offers at the same time the lowest on-state resistances of the industry and the fastest switching behavior, allowing for the achievement of outstanding performance in a wide range of applications.
The 120 V OptiMOS™ technology gives new possibilites for optimized solutions.


Summary of Features

  • Excellent switching performance
  • World’s lowest RDS(on)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 12–48 V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems)
  • Or-ing switches and circuit breakers in 48V systems
  • Class D audio amplifiers

Applications

  • 48 V intermediate bus converter (IBC)
  • Adapters and chargers
  • DIN rail power supplies
  • Energy Storage Systems
  • Microinverter solutions

Designers who used this product also designed with


  • 1EDN7511B |
    Gate driver ICs
  • BSC010N04LS6 |
    N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET
  • IRS21271S |
    Gate driver ICs
  • 2EDS7165H |
    Gate driver ICs
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSC010N04LS6 |
    N-Channel Power MOSFET
  • SN7002W |
    Small signal/small power MOSFET
  • IRS21271S |
    Gate driver ICs
  • 2EDS7165H |
    Gate driver ICs
  • IPT60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDN7511B |
    Gate driver ICs
  • BSC010N04LS6 |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC077N12NS3-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0077 ohms
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