Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND BSC076N04ND

Description
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives
Request a Quote Datasheet
Description
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND - BSC076N04ND - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND
BSC076N04ND
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND BSC076N04ND
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives

OptiMOS™ power transistor 40V

Benefits

  • Dual Super SO8 for high power density (smallest footprint)
  • Superior thermal resistance
  • High operating temperature up to 175°C
  • High shot-through immunity due to Qgd/Qgs<0.8
  • Pb-free plating, RoHS compliant

Potential Applications

  • SMPS
  • Inductive wireless charging
  • Load switches
  • Battery management systems
  • LV drives
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC076N04ND
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.0076 ohms
Unlock Full Specs
to access all available technical data

Similar Products

55V 160A MOSFET Transistor - 278-AUIRF3805S - ERSAELECTRONICS PTE. LTD.
Specs
PD 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tube
View Details
5 suppliers
40V 195A TO220 MOSFET Transistor - 278-AUIRF2804 - ERSAELECTRONICS PTE. LTD.
Specs
PD 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type Tube
View Details
4 suppliers
 - BSM200GA120DN2S7HOSA1 - Rochester Electronics
Infineon Technologies AG
Specs
Package Type AG-62MM-2-1
View Details
 - BSS119NH7796 - Rochester Electronics
Specs
Package Type SOT23; SOT-23-3
Packing Method Tape Reel; Tape & Reel
View Details
2 suppliers