Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND BSC076N04ND

Description
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND - BSC076N04ND - Infineon Technologies AG
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Description
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives
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Datasheet
Datasheet Summary
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BSC076N04ND is a dual N-channel power MOSFET optimized for drive applications, featuring a 40 V drain-source breakdown voltage and a maximum on-state resistance of 7.6 mΩ at 10 V gate-source voltage. It supports a continuous drain current of 20 A and is packaged in an SSO8 dual (TDSON-8-4) case measuring 5.35 mm × 6.35 mm. The device is rated for operation from -55 °C to 175 °C, with a junction-to-case thermal resistance of 2.3 °C/W and 100% avalanche testing up to 87 mJ. It is RoHS compliant and halogen-free per IEC 61249-2-21, and qualified for industrial applications per JEDEC JESD47/20/22.

Datasheet Summary
Powered by GS/AI

BSC076N04ND is a dual N-channel power MOSFET optimized for drive applications, featuring a 40 V drain-source breakdown voltage and a maximum on-state resistance of 7.6 mΩ at 10 V gate-source voltage. It supports a continuous drain current of 20 A and is packaged in an SSO8 dual (TDSON-8-4) case measuring 5.35 mm × 6.35 mm. The device is rated for operation from -55 °C to 175 °C, with a junction-to-case thermal resistance of 2.3 °C/W and 100% avalanche testing up to 87 mJ. It is RoHS compliant and halogen-free per IEC 61249-2-21, and qualified for industrial applications per JEDEC JESD47/20/22.

Suppliers

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND - BSC076N04ND - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND
BSC076N04ND
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND BSC076N04ND
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives

OptiMOS™ power transistor 40V

Benefits

  • Dual Super SO8 for high power density (smallest footprint)
  • Superior thermal resistance
  • High operating temperature up to 175°C
  • High shot-through immunity due to Qgd/Qgs<0.8
  • Pb-free plating, RoHS compliant

Potential Applications

  • SMPS
  • Inductive wireless charging
  • Load switches
  • Battery management systems
  • LV drives
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC076N04ND
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC076N04ND
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.0076 ohms
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