Infineon Technologies AG N-Channel Power MOSFET BSC072N08NS5

Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications Consumer electronics
  • N-Channel Power MOSFET - BSC072N08NS5 - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC072N08NS5 - 819709-BSC072N08NS5 - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications Consumer electronics
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC072N08NS5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC072N08NS5
N-Channel Power MOSFET BSC072N08NS5
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications Consumer electronics

OptiMOS™ 5 power MOSFET 80V for telecom applications

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Adapter

Applications

  • Consumer electronics
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
MOSFET Transistor
285-BSC072N08NS5
MOSFET Transistor 285-BSC072N08NS5
Superior thermal resistance Product overview: BSC072N08NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC072N08NS5 can be used for catalog matching and distributor lookup.

Superior thermal resistance Product overview: BSC072N08NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSC072N08NS5 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC072N08NS5 - 819709-BSC072N08NS5 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC072N08NS5
819709-BSC072N08NS5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC072N08NS5 819709-BSC072N08NS5
Manufacturer: Infineon Technologies Win Source Part Number: 819709-BSC072N08NS5 Categories: Uncategorized Popularity: Low Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 819709-BSC072N08NS5
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BSC072N08NS5 285-BSC072N08NS5 819709-BSC072N08NS5
Product Name N-Channel Power MOSFET MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC072N08NS5
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0072 ohms
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