Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC072N04LD BSC072N04LD

Description
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives Applications Adapters and chargers Automotive instrument cluster Solutions for inductive wireless charging above 50 W
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC072N04LD - BSC072N04LD - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - BSC072N04LD - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives Applications Adapters and chargers Automotive instrument cluster Solutions for inductive wireless charging above 50 W
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Datasheet
Datasheet Summary
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The BSC072N04LD is a dual N-channel logic-level MOSFET designed for synchronous rectification in switch-mode power supplies. It is packaged in an SSO8 dual (TDSON-8-4) configuration, measuring 5.35 mm maximum length by 6.35 mm maximum width. The device has a drain-source breakdown voltage of 40 V, a maximum continuous drain current of 20 A, and a maximum on-state resistance of 7.92 mΩ at 175°C. It supports a maximum junction temperature of 175°C, has a thermal resistance junction-to-case of 2.3 °C/W, and is 100% avalanche tested. The part is RoHS compliant and halogen-free according to IEC 61249-2-21. It is qualified for industrial applications per JEDEC JESD47/20/22.

Datasheet Summary
Powered by GS/AI

The BSC072N04LD is a dual N-channel logic-level MOSFET designed for synchronous rectification in switch-mode power supplies. It is packaged in an SSO8 dual (TDSON-8-4) configuration, measuring 5.35 mm maximum length by 6.35 mm maximum width. The device has a drain-source breakdown voltage of 40 V, a maximum continuous drain current of 20 A, and a maximum on-state resistance of 7.92 mΩ at 175°C. It supports a maximum junction temperature of 175°C, has a thermal resistance junction-to-case of 2.3 °C/W, and is 100% avalanche tested. The part is RoHS compliant and halogen-free according to IEC 61249-2-21. It is qualified for industrial applications per JEDEC JESD47/20/22.

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC072N04LD - BSC072N04LD - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC072N04LD
BSC072N04LD
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC072N04LD BSC072N04LD
OptiMOS™ power transistor 40V Benefits Dual Super SO8 for high power density (smallest footprint) Superior thermal resistance High operating temperature up to 175°C High shot-through immunity due to Qgd/Qgs<0.8 Pb-free plating, RoHS compliant Potential Applications SMPS Inductive wireless charging Load switches Battery management systems LV drives Applications Adapters and chargers Automotive instrument cluster Solutions for inductive wireless charging above 50 W

OptiMOS™ power transistor 40V

Benefits

  • Dual Super SO8 for high power density (smallest footprint)
  • Superior thermal resistance
  • High operating temperature up to 175°C
  • High shot-through immunity due to Qgd/Qgs<0.8
  • Pb-free plating, RoHS compliant

Potential Applications

  • SMPS
  • Inductive wireless charging
  • Load switches
  • Battery management systems
  • LV drives

Applications

  • Adapters and chargers
  • Automotive instrument cluster
  • Solutions for inductive wireless charging above 50 W
Supplier's Site Datasheet
Transistors - BSC072N04LD - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC072N04LD
Transistors BSC072N04LD
PDFN-8(5.2x5.9) MOSFETs ROHS

PDFN-8(5.2x5.9) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number BSC072N04LD BSC072N04LD
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC072N04LD Transistors
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.0072 ohms
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