Infineon Technologies AG N-Channel Power MOSFET BSC070N10NS5

Description
OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on)reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V intermediate bus converter (IBC) Automotive battery management system (BMS) EV charging Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 2ED2110S06M | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC340N08NS3 G | N-Channel Power MOSFET 2EDB7259K | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs BSC026N08NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSS806NE | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash BSC010N04LS | N-Channel Power MOSFET S70FL01GSAGMFA013 | Quad SPI Flash 1ED44173N01B | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs 1EDI60N12AF | Gate driver ICs 1EDN7512B | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 2ED2110S06M | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC340N08NS3 G | N-Channel Power MOSFET 2EDB7259K | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs 1 2 3 4 5
Request a Quote Datasheet
Description
OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on)reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V intermediate bus converter (IBC) Automotive battery management system (BMS) EV charging Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 2ED2110S06M | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC340N08NS3 G | N-Channel Power MOSFET 2EDB7259K | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs BSC026N08NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSS806NE | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash BSC010N04LS | N-Channel Power MOSFET S70FL01GSAGMFA013 | Quad SPI Flash 1ED44173N01B | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs 1EDI60N12AF | Gate driver ICs 1EDN7512B | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 2ED2110S06M | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC340N08NS3 G | N-Channel Power MOSFET 2EDB7259K | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC070N10NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC070N10NS5
N-Channel Power MOSFET BSC070N10NS5
OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on)reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications 48 V intermediate bus converter (IBC) Automotive battery management system (BMS) EV charging Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 2ED2110S06M | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC340N08NS3 G | N-Channel Power MOSFET 2EDB7259K | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs BSC026N08NS5 | N-Channel Power MOSFET 2EDN7524R | Gate driver ICs BSS806NE | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S70FL01GSDPMFV010 | Quad SPI Flash BSC010N04LS | N-Channel Power MOSFET S70FL01GSAGMFA013 | Quad SPI Flash 1ED44173N01B | Gate driver ICs IRS21271S | Gate driver ICs IRS4427S | Gate driver ICs 1EDI60N12AF | Gate driver ICs 1EDN7512B | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 2ED2110S06M | Gate driver ICs 6ED2742S01Q | Gate driver ICs BSC340N08NS3 G | N-Channel Power MOSFET 2EDB7259K | Gate driver ICs BSC028N06NS | N-Channel Power MOSFET 2EDL8123G3C | Gate driver ICs 1 2 3 4 5

OptiMOS™ 5 power MOSFET 100 V in a SuperSO8 5x6 package

Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on)reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Applications

  • 48 V intermediate bus converter (IBC)
  • Automotive battery management system (BMS)
  • EV charging
  • Light electric vehicles (LEV)
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 2EDL8033G4B |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • BSC340N08NS3 G |
    N-Channel Power MOSFET
  • 2EDB7259K |
    Gate driver ICs
  • BSC028N06NS |
    N-Channel Power MOSFET
  • 2EDL8123G3C |
    Gate driver ICs
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • 2EDN7524R |
    Gate driver ICs
  • BSS806NE |
    Small signal/small power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S70FL01GSDPMFV010 |
    Quad SPI Flash
  • BSC010N04LS |
    N-Channel Power MOSFET
  • S70FL01GSAGMFA013 |
    Quad SPI Flash
  • 1ED44173N01B |
    Gate driver ICs
  • IRS21271S |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1EDI60N12AF |
    Gate driver ICs
  • 1EDN7512B |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • BSC340N08NS3 G |
    N-Channel Power MOSFET
  • 2EDB7259K |
    Gate driver ICs
  • BSC028N06NS |
    N-Channel Power MOSFET
  • 2EDL8123G3C |
    Gate driver ICs

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Supplier's Site Datasheet
END - OF - LIFE - BSC070N10NS5 - 1154687-BSC070N10NS5 - Win Source Electronics
Laguna Hills, CA, United States
END - OF - LIFE - BSC070N10NS5
1154687-BSC070N10NS5
END - OF - LIFE - BSC070N10NS5 1154687-BSC070N10NS5
Manufacturer: Infineon Technologies Win Source Part Number: 1154687-BSC070N10NS5 Manufacturer Homepage: www.infineon.com Country of Origin: China, Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1154687-BSC070N10NS5
Manufacturer Homepage: www.infineon.com
Country of Origin: China, Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now
Singapore, Singapore
100V 80A MOSFET Transistor
278-BSC070N10NS5
100V 80A MOSFET Transistor 278-BSC070N10NS5
Trans MOSFET N-CH 100V 80A 8-Pin TDSON EP T/R Product overview: BSC070N10NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC070N10NS5 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 100V 80A 8-Pin TDSON EP T/R Product overview: BSC070N10NS5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSC070N10NS5 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - BSC070N10NS5 - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC070N10NS5
Transistors BSC070N10NS5
100V 80A 2.5W 7mΩ@10V,40A 3.8V@50uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

100V 80A 2.5W 7mΩ@10V,40A 3.8V@50uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global)
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BSC070N10NS5 1154687-BSC070N10NS5 278-BSC070N10NS5 BSC070N10NS5
Product Name N-Channel Power MOSFET END - OF - LIFE - BSC070N10NS5 100V 80A MOSFET Transistor Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0070 ohms
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type PG-TDSON-8 SOT3
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