Infineon Technologies AG N-Channel Power MOSFET BSC066N06NS

Description
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications DIN rail power supplies General purpose motor drive - variating frequency and voltage Multicopters and drones Telecommunication infrastructure Washing and drying Designers who used this product also designed with BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET
Request a Quote
Description
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications DIN rail power supplies General purpose motor drive - variating frequency and voltage Multicopters and drones Telecommunication infrastructure Washing and drying Designers who used this product also designed with BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

BSC066N06NS is an N-channel MOSFET designed for high-performance switching applications such as synchronous rectification in SMPS. It comes in a PG-TDSON-8 package with a drain-source breakdown voltage of 60 V, a maximum on-state resistance of 6.6 mΩ at V_GS = 10 V and I_D = 50 A, and a continuous drain current rating of 64 A at T_C = 25 °C. The device is 100% avalanche tested, features a total gate charge of up to 21 nC, and meets RoHS and IEC 61249-2-21 standards for halogen-free materials. Thermal resistance from junction to case (bottom) is rated between 1.6 and 2.7 K/W. It is qualified for industrial applications with an operating temperature range of -55 °C to 150 °C.

Datasheet Summary
Powered by GS/AI

BSC066N06NS is an N-channel MOSFET designed for high-performance switching applications such as synchronous rectification in SMPS. It comes in a PG-TDSON-8 package with a drain-source breakdown voltage of 60 V, a maximum on-state resistance of 6.6 mΩ at V_GS = 10 V and I_D = 50 A, and a continuous drain current rating of 64 A at T_C = 25 °C. The device is 100% avalanche tested, features a total gate charge of up to 21 nC, and meets RoHS and IEC 61249-2-21 standards for halogen-free materials. Thermal resistance from junction to case (bottom) is rated between 1.6 and 2.7 K/W. It is qualified for industrial applications with an operating temperature range of -55 °C to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC066N06NS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC066N06NS
N-Channel Power MOSFET BSC066N06NS
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications DIN rail power supplies General purpose motor drive - variating frequency and voltage Multicopters and drones Telecommunication infrastructure Washing and drying Designers who used this product also designed with BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSC040N10NS5SC | N-Channel Power MOSFET BSZ900N15NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSC110N15NS5 | N-Channel Power MOSFET

OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.


Summary of Features

  • Optimized for synchronous rectification
  • 40% lower R DS(on) than alternative devices
  • 40% improvement of FOM over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control for 12-48V systems
  • Or-ing switches

Applications

  • DIN rail power supplies
  • General purpose motor drive - variating frequency and voltage
  • Multicopters and drones
  • Telecommunication infrastructure
  • Washing and drying

Designers who used this product also designed with


  • BSC040N10NS5SC |
    N-Channel Power MOSFET
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
  • BSC110N15NS5 |
    N-Channel Power MOSFET
  • BSC040N10NS5SC |
    N-Channel Power MOSFET
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
  • BSC110N15NS5 |
    N-Channel Power MOSFET
  • BSC040N10NS5SC |
    N-Channel Power MOSFET
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
  • BSC110N15NS5 |
    N-Channel Power MOSFET
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC066N06NS - 819708-BSC066N06NS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC066N06NS
819708-BSC066N06NS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC066N06NS 819708-BSC066N06NS
Manufacturer: Infineon Technologies Win Source Part Number: 819708-BSC066N06NS Categories: Uncategorized Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 819708-BSC066N06NS
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now
Singapore, Singapore
100V MOSFET Transistor
2088-BSC066N06NS
100V MOSFET Transistor 2088-BSC066N06NS
MOSFETs TRENCH 40<-<100V>

MOSFETs TRENCH 40<-<100V>

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET DIFFERENTIATED MOSFETS

MOSFET DIFFERENTIATED MOSFETS

Buy Now Datasheet
Transistors - BSC066N06NS - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSC066N06NS
Transistors BSC066N06NS
60V 64A 6.6mΩ@10V,50A 2.5W 3.3V@20uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

60V 64A 6.6mΩ@10V,50A 2.5W 3.3V@20uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BSC066N06NS 819708-BSC066N06NS 2088-BSC066N06NS BSC066N06NS BSC066N06NS
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC066N06NS 100V MOSFET Transistor MOSFET Transistors
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0066 ohms
TJ -55 to 150 C (-67 to 302 F)
Package Type PG-TDSON-8 SOT3 Reel
Unlock Full Specs
to access all available technical data