BSC066N06NS is an N-channel MOSFET designed for high-performance switching applications such as synchronous rectification in SMPS. It comes in a PG-TDSON-8 package with a drain-source breakdown voltage of 60 V, a maximum on-state resistance of 6.6 mΩ at V_GS = 10 V and I_D = 50 A, and a continuous drain current rating of 64 A at T_C = 25 °C. The device is 100% avalanche tested, features a total gate charge of up to 21 nC, and meets RoHS and IEC 61249-2-21 standards for halogen-free materials. Thermal resistance from junction to case (bottom) is rated between 1.6 and 2.7 K/W. It is qualified for industrial applications with an operating temperature range of -55 °C to 150 °C.
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Summary of Features
Benefits
Potential Applications
Applications
Designers who used this product also designed with
Manufacturer: Infineon Technologies
Win Source Part Number: 819708-BSC066N06NS
Categories: Uncategorized
Popularity: Low
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
MOSFETs TRENCH 40<-<100V>
60V 64A 6.6mΩ@10V,50A 2.5W 3.3V@20uA 1 N-Channel TDSON-8-EP(5x6) MOSFETs ROHS
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | BSC066N06NS | 819708-BSC066N06NS | 2088-BSC066N06NS | BSC066N06NS | BSC066N06NS |
| Product Name | N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC066N06NS | 100V MOSFET Transistor | MOSFET | Transistors |
| Polarity | N-Channel; N | N-Channel | |||
| Transistor Technology / Material | Si/SiC | ||||
| rDS(on) | 0.0066 ohms | ||||
| TJ | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | PG-TDSON-8 | SOT3 | Reel |