NPN silicon germanium RF transistor for wireless applications up to 10 GHz, housed in a TSLP-3-8 surface mount package. It features a collector-emitter voltage rating of 4 V at T > 0°C and 3.5 V at T ≤ 0°C, a maximum collector current of 30 mA, and a total power dissipation of 160 mW at T_S ≤ 94°C. The transistor offers a noise figure of 0.5 dB at 1.8 GHz and 0.8 dB at 6 GHz, a transition frequency of 42 GHz, and a maximum stable power gain of 24 dB at 1.8 GHz. Junction temperature ranges from -65°C to 150°C. The device meets ESD handling requirements and features gold metallization for high reliability.
RF Transistor NPN 4.7V 30mA 42GHz 160mW Surface Mount PG-TSLP-3
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | BFR740L3E6327-ND |
| Product Name | Bipolar RF Transistors |
| Polarity | NPN |
