The BFR193L3 is an NPN bipolar RF transistor designed for low-noise, high-gain amplification up to 2 GHz, with a transition frequency of up to 8 GHz and a minimum noise figure of 1 dB at 900 MHz. It is packaged in a TSLP-3-1 surface-mount case with dimensions of 0.6 mm × 0.5 mm × 0.35 mm. The device supports a collector-emitter voltage of 12 V, a collector current of 80 mA, and a total power dissipation of 580 mW at 25 °C. Thermal resistance from junction to solder point is 105 K/W. It is RoHS compliant and qualified to AEC-Q101.
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Transistors |
| Product Number | BFR 193L3 E6327 |
| Product Name | Transistors |
