Infineon Technologies AG Transistors BFR 181 E6327

Description
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Description
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Datasheet
Datasheet Summary
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BFR181 is a low-noise silicon bipolar RF transistor designed for broadband amplifiers with collector currents from 0.5 mA to 12 mA. It is packaged in SOT23 and features a maximum collector-emitter voltage of 12 V, a collector current of 20 mA, and a total power dissipation of 175 mW. The device has a transition frequency of up to 8 GHz and a minimum noise figure of 0.9 dB at 900 MHz. It meets RoHS compliance and has a qualification report according to AEC-Q101. The junction temperature range is -65 to 150 °C.

Datasheet Summary
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BFR181 is a low-noise silicon bipolar RF transistor designed for broadband amplifiers with collector currents from 0.5 mA to 12 mA. It is packaged in SOT23 and features a maximum collector-emitter voltage of 12 V, a collector current of 20 mA, and a total power dissipation of 175 mW. The device has a transition frequency of up to 8 GHz and a minimum noise figure of 0.9 dB at 900 MHz. It meets RoHS compliance and has a qualification report according to AEC-Q101. The junction temperature range is -65 to 150 °C.

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Transistors BFR 181 E6327
RF Bipolar Transistors NPN Silicon RF TRANSISTOR

RF Bipolar Transistors NPN Silicon RF TRANSISTOR

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number BFR 181 E6327
Product Name Transistors
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