The BFP540ESD is a surface mount silicon NPN RF bipolar transistor designed for low noise amplification in RF applications such as LNB local oscillators and broadband LNAs. It is packaged in an SOT343 case with dimensions specified in the outline diagram and mounted on a PCB via a 3000-piece reel. The device features a minimum noise figure of 0.9 dB at 1.8 GHz and 5 mA, a power gain of 21.5 dB at 1.8 GHz and 20 mA, and a 3rd order output intercept point of 24.5 dBm. It has an ESD robustness of 1 kV (HBM), a maximum collector current of 80 mA, and a total power dissipation of 250 mW at 77 °C. The junction temperature rating is 150 °C and it is qualified according to JEDEC JESD47/20/22 for industrial applications.
RF Bipolar Transistors RF BIP TRANSISTOR
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Transistors |
| Product Number | BFP 540ESD H6327 |
| Product Name | Transistors |
