Infineon Technologies AG Transistors BFP 420F H6327

Description
RF Bipolar Transistors RF BIP TRANSISTOR
Description
RF Bipolar Transistors RF BIP TRANSISTOR
Datasheet
Datasheet Summary
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The BFP420F is a low-profile silicon NPN RF bipolar transistor for amplifiers up to 4.5 GHz, used in LNAs and oscillators for CATV, DVB-T, DAB/DMB, and ISM bands. Packaged in a TSFP-4-1 surface-mount case with 1=B, 2=E, 3=C, 4=E pins, it has a transition frequency of 25 GHz, a minimum noise figure of 1.1 dB at 1.9 GHz and 4 mA, and a power gain of 19 dB at 1.9 GHz and 40 mA. The output third-order intercept point is 28 dBm at 1.9 GHz. It is qualified to JEDEC J-STD-020/22/47 for industrial use, has a maximum junction temperature of 150 °C, a thermal resistance of 240 K/W, and is ESD-sensitive and RoHS-compliant.

Datasheet Summary
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The BFP420F is a low-profile silicon NPN RF bipolar transistor for amplifiers up to 4.5 GHz, used in LNAs and oscillators for CATV, DVB-T, DAB/DMB, and ISM bands. Packaged in a TSFP-4-1 surface-mount case with 1=B, 2=E, 3=C, 4=E pins, it has a transition frequency of 25 GHz, a minimum noise figure of 1.1 dB at 1.9 GHz and 4 mA, and a power gain of 19 dB at 1.9 GHz and 40 mA. The output third-order intercept point is 28 dBm at 1.9 GHz. It is qualified to JEDEC J-STD-020/22/47 for industrial use, has a maximum junction temperature of 150 °C, a thermal resistance of 240 K/W, and is ESD-sensitive and RoHS-compliant.

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Transistors BFP 420F H6327
RF Bipolar Transistors RF BIP TRANSISTOR

RF Bipolar Transistors RF BIP TRANSISTOR

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number BFP 420F H6327
Product Name Transistors
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