Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BCW 66F E6327 BCW 66F E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1022778-BCW 66F E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 450mV @ 50mA, 500mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1022778-BCW 66F E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 450mV @ 50mA, 500mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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TRANSISTORS - Transistors (BJT) - Single - BCW 66F E6327 - 1022778-BCW 66F E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BCW 66F E6327
1022778-BCW 66F E6327
TRANSISTORS - Transistors (BJT) - Single - BCW 66F E6327 1022778-BCW 66F E6327
Manufacturer: Infineon Technologies Win Source Part Number: 1022778-BCW 66F E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 450mV @ 50mA, 500mA Collector Cut-off Current(Max): 20nA (ICBO) Typical Gain (hFE) (Min): 100 @ 100mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1022778-BCW 66F E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 170MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 450mV @ 50mA, 500mA
Collector Cut-off Current(Max): 20nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 100mA, 1V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - BCW66FE6327-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BCW66FE6327-ND
Single Bipolar Transistors BCW66FE6327-ND
Bipolar (BJT) Transistor NPN 45V 800mA 170MHz 330mW Surface Mount PG-SOT23

Bipolar (BJT) Transistor NPN 45V 800mA 170MHz 330mW Surface Mount PG-SOT23

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category Transistors Transistors
Product Number 1022778-BCW 66F E6327 BCW66FE6327-ND
Product Name TRANSISTORS - Transistors (BJT) - Single - BCW 66F E6327 Single Bipolar Transistors
Polarity NPN; NPN NPN
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