PNP silicon small-signal transistor for AF input stages and driver applications, packaged in SOT323 with a maximum collector-emitter voltage of 30 V, collector current of 100 mA, and total power dissipation of 250 mW at 124 °C. The device has a typical current gain of 250 to 475 for the B-group, a transition frequency of 250 MHz, and meets RoHS compliance. Thermal resistance from junction to soldering point is 105 K/W. Complementary NPN types are BC847...-BC850... .
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC860BWE6327 |
| Polarity | PNP |
