Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 199T E6327

PNP silicon digital transistor with integrated 47 kΩ bias resistor, designed for switching, inverter, interface, and driver circuits, packaged in SC75 with a collector-emitter voltage rating of 50 V, collector current of 70 mA, and total power dissipation of 250 mW at a junction temperature up to 109 °C; transition frequency is 200 MHz, and collector-emitter saturation voltage is 0.3 V at 10 mA collector current and 0.5 mA base current.