Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 189T E6327

BCR189T is a PNP silicon digital transistor with a built-in 22 kΩ bias resistor for switching and driver applications, packaged in SC75. It has a 50 V collector-emitter voltage rating, 100 mA maximum collector current, and 250 mW power dissipation at case temperature ≤ 109 °C. The junction temperature limit is 150 °C. DC current gain (hFE) ranges from 120 to 630 at IC = 5 mA and VCE = 5 V. Collector-emitter saturation voltage is ≤ 0.3 V at IC = 10 mA and IB = 0.5 mA. Transition frequency is 200 MHz. Input on voltage is 0.5 to 1.1 V, input off voltage is 0.4 to 0.8 V. Storage temperature range is -65 to 150 °C. Packaged in 3,000-piece reels (E6327 code).