Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 158 B6327

PNP silicon digital transistor with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) for switching, inverter, and driver circuits, housed in an SOT23 package. Rated for a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at ambient temperatures up to 102°C. Meet AEC Q101 qualification and are RoHS compliant. Transition frequency is 200 MHz, with a collector-emitter saturation voltage of up to 0.3 V at I_C = 10 mA and I_B = 0.5 mA.