Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 135T E6327

NPN silicon digital transistor with built-in bias resistors (10 kΩ and 47 kΩ) for switching and interface applications, available in SC75 package. Rated for 50 V collector-emitter voltage, 100 mA collector current, and 250 mW total power dissipation at ambient temperatures up to 109°C. Junction temperature maximum is 150°C. Thermal resistance from junction to soldering point is ≤165 K/W. Transition frequency is 150 MHz. Meets RoHS standards.