Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 135 B6327

NPN silicon digital transistor with built-in bias resistors (R1=10 kΩ, R2=47 kΩ) for switching and interface applications, available in SOT-23 package, rated for 50 V collector-emitter voltage, 100 mA collector current, and 200 mW total power dissipation at junction temperatures up to 102°C, with a transition frequency of 150 MHz and qualified to AEC-Q101 and RoHS standards.