Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 133L3 E6327

NPN silicon digital transistor with built-in bias resistors (10 kΩ each) for switching and interface applications, packaged in TSLP-3-4 with a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 250 mW at T_S ≤ 135°C. Junction temperature rating is 150°C, with thermal resistance from junction to soldering point ≤ 60 K/W.