Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR 129L3 E6327

NPN silicon digital transistor with built-in bias resistor (10 kΩ) for switching and interface circuits, housed in a TSLP-3-4 package. Maximum collector-emitter voltage is 50 V, collector current is 100 mA, and total power dissipation is 250 mW at case temperature ≤ 135°C. Junction temperature rating is 150°C. Transition frequency is 150 MHz, DC current gain ranges from 120 to 630, and collector-emitter saturation voltage is ≤ 0.3 V. Input on voltage is 0.5 to 1.1 V, and input off voltage is ≤ 1 V. Thermal resistance from junction to soldering point is ≤ 60 K/W.