Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single - BCP52-16 E6327 BCP52-16 E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 200832-BCP52-16 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 125MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 200832-BCP52-16 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 125MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors (BJT) - Single - BCP52-16 E6327 - 200832-BCP52-16 E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BCP52-16 E6327
200832-BCP52-16 E6327
TRANSISTORS - Transistors (BJT) - Single - BCP52-16 E6327 200832-BCP52-16 E6327
Manufacturer: Infineon Technologies Win Source Part Number: 200832-BCP52-16 E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 125MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT223-4 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 500mV @ 50mA, 500mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 150mA, 2V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 200832-BCP52-16 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 125MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT223-4
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 500mV @ 50mA, 500mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 150mA, 2V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 200832-BCP52-16 E6327
Product Name TRANSISTORS - Transistors (BJT) - Single - BCP52-16 E6327
Polarity PNP; PNP
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