Infineon Technologies AG Bipolar Transistors - BJT BC847BE6327XT

Description
Bipolar Transistors - BJT NPN 45 V 100 mA
Description
Bipolar Transistors - BJT NPN 45 V 100 mA
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NPN silicon bipolar transistors for audio frequency input stages and driver applications, available in SOT23 package, with a collector-emitter voltage rating of 45 V and a continuous collector current of 100 mA. The devices meet AEC-Q101 qualification standards and are RoHS compliant. They feature high current gain, low noise between 30 Hz and 15 kHz, and low saturation voltage. Transistors in this series are offered in gain groups A, B, and C, with hFE ranging from 200 to 450 for the B group. Peak collector current is rated at 200 mA, and total power dissipation is 250 mW for the SOT23 variant. Junction temperature is rated up to 150 °C.

Datasheet Summary
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NPN silicon bipolar transistors for audio frequency input stages and driver applications, available in SOT23 package, with a collector-emitter voltage rating of 45 V and a continuous collector current of 100 mA. The devices meet AEC-Q101 qualification standards and are RoHS compliant. They feature high current gain, low noise between 30 Hz and 15 kHz, and low saturation voltage. Transistors in this series are offered in gain groups A, B, and C, with hFE ranging from 200 to 450 for the B group. Peak collector current is rated at 200 mA, and total power dissipation is 250 mW for the SOT23 variant. Junction temperature is rated up to 150 °C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC847BE6327XT
Bipolar Transistors - BJT BC847BE6327XT
Bipolar Transistors - BJT NPN 45 V 100 mA

Bipolar Transistors - BJT NPN 45 V 100 mA

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC847BE6327XT
Product Name Bipolar Transistors - BJT
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