Infineon Technologies AG Bipolar Transistor Arrays BC 856S E6433

Dual PNP silicon bipolar transistor array in SOT363 package for AF input stages and driver applications, with a collector-emitter voltage rating of 65 V, collector current of 100 mA, and total power dissipation of 250 mW at case temperature ≤ 115 °C. Features a junction temperature rating of 150 °C, thermal resistance from junction to soldering point of ≤ 140 K/W, and is RoHS compliant and qualified to AEC-Q101.