Infineon Technologies AG Single Bipolar Transistors BC 856B E6327

Description
Bipolar (BJT) Transistor PNP 65V 100mA 250MHz 330mW Surface Mount PG-SOT23
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Description
Bipolar (BJT) Transistor PNP 65V 100mA 250MHz 330mW Surface Mount PG-SOT23
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Datasheet
Datasheet Summary
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 65 V, collector current of 100 mA, and total power dissipation of 330 mW at junction temperature ≤ 71 °C. Compliant with AEC-Q101 and RoHS standards.

Datasheet Summary
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PNP silicon AF transistor for input stages and driver applications, in SOT23 package, with a collector-emitter voltage rating of 65 V, collector current of 100 mA, and total power dissipation of 330 mW at junction temperature ≤ 71 °C. Compliant with AEC-Q101 and RoHS standards.

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Single Bipolar Transistors - BC856BE6327INTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC856BE6327INTR-ND
Single Bipolar Transistors BC856BE6327INTR-ND
Bipolar (BJT) Transistor PNP 65V 100mA 250MHz 330mW Surface Mount PG-SOT23

Bipolar (BJT) Transistor PNP 65V 100mA 250MHz 330mW Surface Mount PG-SOT23

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BC856BE6327INTR-ND
Product Name Single Bipolar Transistors
Polarity PNP
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