Infineon Technologies AG Bipolar Transistors - BJT BC 850B E6327

NPN silicon bipolar transistors for AF input stages and driver applications, available in SOT23 package, with a collector-emitter voltage rating of 30 V, collector current of 100 mA, total power dissipation of 330 mW at 25°C, and junction temperature limit of 150 °C. The BC850B variant has a DC current gain (hFE) range of 200 to 450 at IC = 2 mA and VCE = 5 V. The device is RoHS compliant and meets AEC-Q101 automotive qualification standards, except for the BL3 variant which is not qualified. The BC850B E6327 is part of the BC850 series and shares the SOT23 package dimensions and thermal characteristics of the series.