NPN silicon AF transistor for input stages and driver applications, in an SOT23 package. It has a collector-emitter voltage rating of 30 V, collector current of 100 mA, and total power dissipation of 330 mW at 71 °C. The DC current gain (hFE) for the A-group is specified between 110 and 220 at 2 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is up to 250 mV at 10 mA collector current and 0.5 mA base current. The device is RoHS compliant and not qualified to AEC-Q101.
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC 848A E6327 |
| Product Name | Bipolar Transistors - BJT |
