Infineon Technologies AG Single Bipolar Transistors BC 808-40 E6327

PNP silicon bipolar transistor for general audio frequency applications, available in SOT23 package. Rated for a collector-emitter voltage of 25 V, collector current of 500 mA, and total power dissipation of 330 mW at ambient temperatures up to 79 °C. Features a DC current gain (hFE) group of 250 to 630 at 100 mA collector current, collector-emitter saturation voltage up to 0.7 V, and transition frequency of 200 MHz. RoHS compliant and qualified to AEC-Q101.