Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRL7766M2TR AUIRL7766M2TR

Description
Manufacturer: Infineon Technologies Win Source Part Number: 199533-AUIRL7766M2TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DIRECTFET M4 Dimension: DirectFET Isometric M4 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 2.5V @ 150μA Max Gate Charge: 66nC @ 4.5V Max Input Capacitance: 5305pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 10 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRL7766M2TR - 199533-AUIRL7766M2TR - Win Source Electronics
    Win Source Electronics
  • AUIRL7766M2TR - Rochester Electronics
    Rochester Electronics
  • Single FETs, MOSFETs - AUIRL7766M2TR - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - AUIRL7766M2TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRL7766M2TR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, Aec-Q101, N-Ch, 100V, Directfetm4; Transistor Polarity Infineon - 91Y4169 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 199533-AUIRL7766M2TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DIRECTFET M4 Dimension: DirectFET Isometric M4 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 2.5V @ 150μA Max Gate Charge: 66nC @ 4.5V Max Input Capacitance: 5305pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 10 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRL7766M2TR - 199533-AUIRL7766M2TR - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRL7766M2TR
199533-AUIRL7766M2TR
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRL7766M2TR 199533-AUIRL7766M2TR
Manufacturer: Infineon Technologies Win Source Part Number: 199533-AUIRL7766M2TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: DIRECTFET M4 Dimension: DirectFET Isometric M4 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 2.5V @ 150μA Max Gate Charge: 66nC @ 4.5V Max Input Capacitance: 5305pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 10 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 199533-AUIRL7766M2TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 62.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: DIRECTFET M4
Dimension: DirectFET Isometric M4
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 150μA
Max Gate Charge: 66nC @ 4.5V
Max Input Capacitance: 5305pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 10 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
- AUIRL7766M2TR - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
AUIRL7766M2TR
AUIRL7766M2TR
75V-100V N-Channel Automotive MOSFET

75V-100V N-Channel Automotive MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - AUIRL7766M2TR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AUIRL7766M2TR
Single FETs, MOSFETs AUIRL7766M2TR
MOSFET N-CH 100V 10A DIRECTFET

MOSFET N-CH 100V 10A DIRECTFET

Supplier's Site Datasheet
Single FETs, MOSFETs - AUIRL7766M2TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AUIRL7766M2TR-ND
Single FETs, MOSFETs AUIRL7766M2TR-ND
N-Channel 100V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4

N-Channel 100V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRL7766M2TR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AUIRL7766M2TR
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRL7766M2TR
MOSFET N-CH 100V 10A DIRECTFET

MOSFET N-CH 100V 10A DIRECTFET

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
AUIRL7766M2TR
MOSFET AUIRL7766M2TR
MOSFET 100V AUTO GRADE 1 N-CH HEXFET

MOSFET 100V AUTO GRADE 1 N-CH HEXFET

Buy Now Datasheet
Mosfet, Aec-Q101, N-Ch, 100V, Directfetm4; Transistor Polarity Infineon - 91Y4169 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 100V, Directfetm4; Transistor Polarity Infineon
91Y4169
Mosfet, Aec-Q101, N-Ch, 100V, Directfetm4; Transistor Polarity Infineon 91Y4169
MOSFET, AEC-Q101, N-CH, 100V, DIRECTFETM4; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; PowerRoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 100V, DIRECTFETM4; Transistor Polarity:N Channel; Continuous Drain Current Id:51A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.008ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; PowerRoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 199533-AUIRL7766M2TR AUIRL7766M2TR AUIRL7766M2TR AUIRL7766M2TR-ND AUIRL7766M2TR AUIRL7766M2TR 91Y4169
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRL7766M2TR Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, Aec-Q101, N-Ch, 100V, Directfetm4; Transistor Polarity Infineon
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 2500 to 62500 milliwatts 2500 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3; DIRECTFET M4 WDSON7 DirectFET™ Isometric M4 DirectFET™ Isometric M4 Surface Mount TO-3
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