Huayi Microelectronics Co., Ltd. Transistors HY4903B6

Description
30V 314A 1.7mΩ@10V,150A 268W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS
  • Transistors - HY4903B6 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 314A 1.7mΩ@10V,150A 268W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY4903B6 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HY4903B6
Transistors HY4903B6
30V 314A 1.7mΩ@10V,150A 268W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS

30V 314A 1.7mΩ@10V,150A 268W 3V@250uA 1 N-Channel TO-263-6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY4903B6
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

20 V, 2 A PNP medium power transistors - BC69PA-QX - Nexperia B.V.
Nexperia B.V.
20 V, 2 A PNP medium power transistors
BC69PA-QX
Specs
Package Type SOT1061
View Details
PMIC - PMIC - Gate Drivers - LM5111-2MY/NOPB - 1054839-LM5111-2MY/NOPB - Win Source Electronics
Texas Instruments
PMIC - PMIC - Gate Drivers - LM5111-2MY/NOPB
LM5111-2MY/NOPB
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT3; 8-MSOP-PowerPad
View Details
Transistor - 21974632 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
SP-142751
View Details
IGBT Module - 158777848 - Radwell International
Fuji Electric Corp. of America
IGBT Module
6MBP15VSG060-50
Specs
Transistor Type IGBT
View Details