Huayi Microelectronics Co., Ltd. Transistors HY1908D

Description
80V 90A 9mΩ@10V,45A 64W 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS
  • Transistors - HY1908D - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
80V 90A 9mΩ@10V,45A 64W 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY1908D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HY1908D
Transistors HY1908D
80V 90A 9mΩ@10V,45A 64W 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS

80V 90A 9mΩ@10V,45A 64W 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY1908D
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 4700471 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
501609
View Details
IGBT - 215636585 - Radwell International
Fuji Electric Corp. of America
IGBT
1MBI300F-120
Specs
Transistor Type IGBT
View Details
CSD17483F4 30V, N-Channel FemtoFET?MOSFET - CSD17483F4 - Texas Instruments
Texas Instruments
CSD17483F4 30V, N-Channel FemtoFET?MOSFET
CSD17483F4
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type LGA 1.0 x 0.6mm
View Details
7 suppliers
Single IGBTs - 448-AIGB30N65H5ATMA1TR-ND - DigiKey
Infineon Technologies AG
Single IGBTs
AIGB30N65H5ATMA1
Specs
Transistor Type IGBT
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
View Details
4 suppliers