Huayi Microelectronics Co., Ltd. Transistors HY1904B

Description
40V 90A 4.7mΩ@10V,45A 100W 1.7V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
Request a Quote
Description
40V 90A 4.7mΩ@10V,45A 100W 1.7V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY1904B - ODG (Origin Data Global)
Shenzhen, China
Transistors
HY1904B
Transistors HY1904B
40V 90A 4.7mΩ@10V,45A 100W 1.7V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

40V 90A 4.7mΩ@10V,45A 100W 1.7V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY1904B
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

590A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E590 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Integrated Circuits (ICs) - PMIC - Motor Drivers, Controllers - 1253324-DRV8880RHRR - Win Source Electronics
Specs
Transistor Type Bipolar RF; MOSFET; Power-MOSFET
Package Type SOT3
View Details
Single FETs, MOSFETs - 448-AIMBG120R160M1XTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details