Huayi Microelectronics Co., Ltd. Transistors HY1607B

Description
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
Request a Quote
Description
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY1607B - ODG (Origin Data Global)
Shenzhen, China
Transistors
HY1607B
Transistors HY1607B
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY1607B
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

50 V, 500 mA NPN general-purpose transistor - 2PD602AQL/DG,235 - Nexperia B.V.
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; SOT23
View Details
730A IGBT MODULE FOR ONE PHASE 400/480V - SK-H1-QOUT-D730 - Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
 - LM5109BMA/NOPB - Rochester Electronics
Texas Instruments
Specs
Transistor Type MOSFET
Package Type SOIC8
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SHF-0289 - 1095657-SHF-0289 - Win Source Electronics
Specs
Polarity HFET
Package Type SOT3; SOT89; SOT-89
View Details