Huayi Microelectronics Co., Ltd. Transistors HY1607B

Description
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS
Description
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY1607B - ODG (Origin Data Global)
Shenzhen, China
Transistors
HY1607B
Transistors HY1607B
68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

68V 80A 7.8mΩ@10V,40A 115W 4V@250uA 1 N-Channel TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY1607B
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

CSD25213W10 P-Channel NexFET? Power MOSFET - CSD25213W10 - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity P-Channel
Package Type WLP1.0x1.0
View Details
7 suppliers
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details
PRECISION P-CHANNEL EPAD® MOSFET ARRAY QUAD ENHANCED MODE MATCHED PAIR - ALD310708APCL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type PDIP16
View Details
4 suppliers