Huashuo Semiconductor Transistors HSBB02P15

Description
150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 1 Piece P-Channel PQFN-8(3x3) MOSFETs ROHS
Description
150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 1 Piece P-Channel PQFN-8(3x3) MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HSBB02P15 - ODG (Origin Data Global)
Shenzhen, China
Transistors
HSBB02P15
Transistors HSBB02P15
150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 1 Piece P-Channel PQFN-8(3x3) MOSFETs ROHS

150V 2A 640mΩ@10V,1A 7.7W 3V@250uA 1 Piece P-Channel PQFN-8(3x3) MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HSBB02P15
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1627-T-AZ - 855053-2SA1627-T-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT Module - 55083898 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details