Hitachi High Technologies America, Inc. Silicon Drift X-ray Detector (SDD) Vortex®-EM

Vortex®-EM silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-EM detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At 0.1 µs PT with an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. Extended probe (300 mm) Available in 30, 40, 50, 65, 70, 80 mm2 Available in thickness of 0.5 and 1 mm