Vortex®-EM silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-EM detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At 0.1 µs PT with an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.
| Hitachi High Technologies America, Inc. | |
|---|---|
| Product Category | Radiation Detectors |
| Product Number | Vortex®-EM |
| Product Name | Silicon Drift X-ray Detector (SDD) |
| Detector Style | Fixed Installation |
