Hitachi High Technologies America, Inc. Silicon Drift X-ray Detector (SDD) Vortex®-90EX

Description
Vortex®-EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-90EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. Extended probe (90 mm) Available in 30, 40, 50, 65, 70, 80 mm2 Available in thickness of 0.5 and 1 mm
Description
Vortex®-EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-90EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. Extended probe (90 mm) Available in 30, 40, 50, 65, 70, 80 mm2 Available in thickness of 0.5 and 1 mm

Suppliers

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Silicon Drift X-ray Detector (SDD) - Vortex®-90EX - Hitachi High Technologies America, Inc.
Schaumburg, IL, USA
Silicon Drift X-ray Detector (SDD)
Vortex®-90EX
Silicon Drift X-ray Detector (SDD) Vortex®-90EX
Vortex®-EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-90EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate. Extended probe (90 mm) Available in 30, 40, 50, 65, 70, 80 mm2 Available in thickness of 0.5 and 1 mm

Vortex®-EX silicon drift X-ray detectors feature active areas between 30 mm2 and 80 mm2. Vortex®-90EX detectors are produced from high purity silicon using state-of-the-art CMOS production technology. They feature excellent energy resolution (<130 eV FWHM at Mn Kα is typical) and a high count rate capability. At a very short peaking time of 0.1 µs, an output count rate of 900 kcps is achieved. A unique feature of these detectors is their ability to process high count rates with very small loss in energy resolution and minimal peak shift with count rate.

  • Extended probe (90 mm)
  • Available in 30, 40, 50, 65, 70, 80 mm2
  • Available in thickness of 0.5 and 1 mm
Supplier's Site

Technical Specifications

  Hitachi High Technologies America, Inc.
Product Category Radiation Detectors
Product Number Vortex®-90EX
Product Name Silicon Drift X-ray Detector (SDD)
Detector Style Fixed Installation
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